IQE has announced the launch of gallium nitride-based, high electron mobility transistor (GaN HEMT) epitaxial wafers on 150mm diameter semi-insulating silicon carbide (SiC) substrates, supplied by the WBG Materials subsidiary of II‐VI Inc. a global provider of engineering materials and optoelectronic components. GaN power amplifiers offer superior power capability, efficiency, bandwidth and linearity compared with silicon (Si) or gallium arsenide (GaAs)-based technologies commonly used, providing significant benefits in terms of both higher performance and lower overall system costs. Read more: http://www.electroiq.com/articles/sst/2013/05/iqe-and-ii-vi-inc–launch-150mm-gan-hemt-epi-wafers-on-sic-subst.html
Client & Alumni News
Ben Franklin Alumnus IQE Launches 150mm Epi Wafers on Silicon Substrates
The Ben Franklin Technology Partners is an initiative of the Pennsylvania Department of Community and Economic Development and is funded by the Ben Franklin Technology Development Authority.