Client & Alumni News

Ben Franklin Alumnus IQE Launches 150mm Epi Wafers on Silicon Substrates

IQE has announced the launch of gallium nitride-based, high electron mobility transistor (GaN HEMT) epitaxial wafers on 150mm diameter semi-insulating silicon carbide (SiC) substrates, supplied by the WBG Materials subsidiary of II‐VI Inc. a global provider of engineering materials and optoelectronic components. GaN power amplifiers offer superior power capability, efficiency, bandwidth and linearity compared with silicon (Si) or gallium arsenide (GaAs)-based technologies commonly used, providing significant benefits in terms of both higher performance and lower overall system costs. Read more:–launch-150mm-gan-hemt-epi-wafers-on-sic-subst.html